Integrated Silicon Carbide Epitaxy Equipment with Vertical Airflow
Brand
SiCCESS®
Epitaxy Specification
8”/6” silicon carbide Epi-wafers
Category
Silicon Carbide Epitaxy Equipment
Product Accessories
Detailed Introduction
▍Technical Advantages
Our equipment has independent intellectual property rights, with an innovative air intake method, vertical airflow and temperature field controls, supported by an automated loading/unloading EFEM system and high-temperature wafer transfer. With world-leading technical indicators and outstanding performance, its remarkable advantages, such as high throughput, 8”/6” compatibility, low cost of ownership, continuous multi-furnace automated growth control, low defect rate, ease of maintenance, and reliability, bring great benefits to our customers.
▍Process Features
Throughput
≥1100 wafers/month (dual chambers); can be optimized to 1200 wafers/month through process optimization
Epitaxy specification
8”/6” compatible
Temperature zones
Multi-zone temperature control
Airflow
Vertical spraying shower-head, airflow adjustable across multiple zones
Rotation speed
0-1000 rpm
Maximum epitaxial growth rate
≥60 μm /hour
Thickness uniformity
≤2%
(can be optimized to within 1%, σ/average, EE 5mm)
Doping uniformity
≤3%
(can be optimized to within 1.5%, σ/average, EE 5mm)
Killer defect density
≤ 0.2cm-2 (can be optimized to 0.01cm-2)
Unique advantages
Better growth of high-voltage thick films and trench-filling epitaxy
* The above data are from measurement by customers
Address
中国江苏省苏州市工业园区苏慕路100号
No.100, Sumu Road, Suzhou Industrial Park, Suzhou, Jiangsu, China
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