Split Silicon Carbide Epitaxy Equipment with Vertical Airflow
Brand
SiCCESS®
Epitaxy Specification
8”/6” silicon carbide Epi-wafers
Category
Silicon Carbide Epitaxy Equipment
Product Accessories
Detailed Introduction
▍Technical Advantages
The power supply, exhaust module, and PM/TM/EFEM modules are separated for split design, allowing users to place the power supply and exhaust module into the gray area or interlayer separately. It can be operated with SMIF modules and AMHS to realize automated operation.
Our equipment has independent intellectual property rights, with an innovative air intake method, vertical airflow and temperature field controls, supported by an automated loading/unloading EFEM system and high-temperature wafer transfer. With world-leading technical indicators and outstanding performance, its remarkable advantages, such as high throughput, 8”/6” compatibility, low cost of ownership, continuous multi-furnace automated growth control, low defect rate, ease of maintenance, and reliability, bring great benefits to our customers.
▍Process Features
Split design
Electrical and exhaust systems can be placed independently in the gray area or in the interlayer
Throughput
≥1100 wafers/month (dual chambers); can be optimized to 1200 wafers/month through process optimization
Epitaxy specification
8”/6” compatible
Temperature zone and airflow model
Multi-zone temperature control, vertical spraying, and adjustable airflow across multiple zones
Rotation speed
0-1000 rpm
Maximum epitaxial growth rate
≥60 μm/hour
Thickness uniformity
≤2%
(can be optimized to within 1%, σ/average, EE 5mm)
Doping uniformity
≤3%
(can be optimized to within 1.5%, σ/average, EE 5mm)
Killer defect density
≤ 0.2cm-2
(can be optimized to 0.01cm-2)
Unique advantages
Better growth of high-voltage thick films and trench-filling epitaxy
* The above data are from measurement by customers
Address
中国江苏省苏州市工业园区苏慕路100号
No.100, Sumu Road, Suzhou Industrial Park, Suzhou, Jiangsu, China
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